Photo resist 별 특성                                  Spincoater Main

각종 PR(Photoresist),stripper,developer 판매

 

TPR,

AZ1512 :i-line 에서 h-line 까지 UV-sensitive, 

           -AZ GXR601(i-line용,h-line용)14CP ,AZ HKT501(g-line용)

AZ5214,:H-line uv-sensitive lift-Off 용

SU-80 

 

 

 

Photoresist Database


Following list contains common near UV (360 nm – 380 nm) photoresists used in semiconductor and MEMS manufacturing.
The photoresists are sub-grouped by common properties < Propose Other>
General Purpose Thin Film Photoresists

Series Products Characteristic Thickness range [µm] Tone Sens-itivity*
AZ® 111 XFS Photoresist AZ 111 XFS General propose resists for wet etch applications with improved adhesion and reduced mask sticking 0.8 to 1.4 + h-i  
AZ® 1500 Series AZ 1505, AZ 1512, AZ 1518, AZ 1529 General propose, resists for wet etch applications and plating 0.4 to 4.0 + g-h-i  
AZ® 1500-SFD Series AZ 1512-SFD, AZ 1518-SFD Dyed versions of AZ® 1500, suppress reflectivity on metal surfaces 1.2 to 3.0 + g-h-i  
AZ® 3300 Series AZ 3312, AZ 3318-D, AZ 3350-HS, AZ 3322HS 2D General purpose, crossover resists, thermally stable up to 125 °C 1.0 to 2.5 + g-h-i  
AZ® 3300-F Series AZ 3312-F, AZ 3330-F High speed version of AZ® 3300 series 0.8 - 5.0 + g-h-i  
AZ® 4999 Photoresist AZ 4999 Photoresist for spray coating applications NA + g-h-i  
AZ® 6600 Series AZ 6612, AZ 6615, AZ 6618-2DG, AZ 6624, AZ 6632 General propose resists for wet and dry etch application 1.0 to 4.5 + g-h-i  
AZ® 8112 Photoresist AZ 8112 3 to 4 times faster version of 111 XFS, used for scanning projection exposure 1.0 to 1.7 + h-i  
AZ® ECI 3000 Series AZ ECI 3007, AZ ECI 3012, AZ ECI 3027 Universal high resolution i-line/crossover photoresist series 0.6 to 3.8 + g-h-i  
AZ® HiR™ 1075 Photoresist AZ HiR 1075 Ultra-high resolution, L/S to 0.22 um, CH to 0.35 um 0.6 to 1.2 + i  
AZ® MiR™ 701 Series AZ MiR 701 High resolution, fast, cost effective photoresists designed for replacement of older mid-range production resists. L/S to 0.35 um, CH to 0.4 um 0.6 to 3.0 + g-i  
AZ® MiR™ 703 Series AZ MiR 703, AZ MiR 703 (dyed) Mid range, fast, cost-effective photoresists designed for replacement of older mid-range and crossover production products. L/S to 0.4 um, CH to 0.5 um 0.8 - 1.4 + g-h-i  
AZ® MiR™ 900 Photoresist AZ MiR 900 High aspect ratio. L/S to 0.6 um 2.0 to 4.5 + i  
AZ® N4000 Series AZ N4035 Non corrosive broadband photoresist with process latitude over 50% and high sensitivity 2.5 to 5.5 - g-h-i  
AZ® N6000 Series AZ N6010, AZ N6020, AZ N6035, AZ N6070 High speed, i-line photoresists for ion implant applications. L/S to 0.6 um 0.6 to 10.0 - i  
HNR Series HNR 80, HNR 120 The resists with excellent adhesion resistance to “wet” etching solutions such as hydrofluoric or phosphoric/nitric acid mixtures and to plasma etching systems and .lower mask-to-wafer sticking tendencies during contact exposures 0.6 to 1.5 - g-i  
HPR 500 Series HPR 504, HPR 505, HPR 506 Photoresists with good adhesion (may not require priming) for ion implant, wet and dry etching. 1.2 to 3.3 + g-h  
OiR 620 Series OiR 620-07, OiR 620-09, OiR 620-10 Resists designed for ultra-high resolution with a robust process window for 0.30 µm production design rules for non-reflective substrates 0.6 to 1.3 + i  
OiR 674 Series OiR 674-09, OiR 674-11, OiR 674-14 High throughput advanced i-line resist for patterns down to 0.35 um with superior performance on contact hole and TiN layers and vertical profiles and wide process latitude 0.7 to 1.6 + i  
OiR 906 Series OiR 906-12i, OiR 906-17i Fast i-line photoresist with high performance in g-line and wide process latitude for patterns down to 0.4 um. Compatible with BARC’s and TiN substrates and comes in dyed versions with fast photospeed 0.6 to 2.4 + g-i  
OiR 907 Series OiR 907-12, OiR 907-17 Ultrafast i-line resists with high performance in g-line and broadband with wide process latitude and zero bias. For patterns down to 0.5 um 1.0 to 2.5 + g-i  
OiR 908 Series OiR 908-12, OiR 908-17, OiR 908-35 Crossover photoresist designed for high throughput biased applications with has excellent thermals, and good wet etch adhesion. For patterns down to 0.7 um 1.0 to 5.0 + g-i  
SC Series SC100, SC180, SC450 General purpose thin film negative photoresist with excellent edge acuity resistant to a variaty of etchants including those commonly used to etch silicon 2.0 to 6.0 - g-i  
PR1 Series PR1-1000A, PR1-2000A General purpose photoresist without HMDS requirement for etching, implantation and plating 0.7 to 4.2 + i  
ma-P 1200 Series ma-P 1205, ma-P 1210, ma-P 1215, ma-P 1225, ma-P 1240 Thin film photoresists for wet etch, dry etch, implantation and plating 0.5 to 10 + g-i  
MEGAPOSIT™ SPR™220 Series SPR220-1.2, SPR220-1.5, SPR220-3.0, SPR220-4.5, SPR220-7.0 General purpose photoresists with excellent adhesion and plating characteristics for MEMS and bump processes. Applications: Cu, Au, NiFe 1.0 to 30 + g-i  
MEGAPOSIT™ SPR™3000 Photoresist SPR3012, SPR3012L, SPR3015M, SPR3017 General purpose photoresists for 0.6 um and larger with wide process latitude and high throughout 0.8 - 1.7 + g-h-i  
MEGAPOSIT™ SPR™660 SERIES SPR660-0.8, SPR660-1.0, SPR660-1.2, SPR660-1.5, SPR660-2.1, SPR660-3.0, SPR660L-1.0, SPR660M-0.6, SPR660M-1.5 Advanced photoresists designed for 0.35 um and larger structures. Undyed and dyed versions available 0.6 to 3.5 + i  
MEGAPOSIT™ SPR™700 SERIES SPR700-0.8, SPR700-1.0, SPR700-1.2, SPR700-1.5, SPR700-1.8, Multi wavelength photoresists optimized to provide robust process latitudes and high throughput with excellent thermal stability 0.6 - 2.8 + g-i  
MEGAPOSIT™ SPR™955-CM SERIES SPR955-CM-0.7, SPR955-CM-0.9, SPR955-CM-1.1, SPR955-CM-1.4, SPR955-CM-1.8, SPR955-CM-2.1 General purpose, high throughput photoresist for 0.35 um front-end and back-end processes 0.6 to 3.0 + i  
MICROPOSIT® S1800® Series S1805, S1811, S1813, S1813 J2, S1818, S1822 General propose photoresists for advanced IC fabrication 0.5 to 3.3 + G-i  
ma-N 400 and ma-N 1400 Series ma-N 405, ma-N 415, ma-N 420, ma-N 440, ma-N 490, ma-N 1405, ma-N 1407, ma-N 1410, ma-N 1420, ma-N 1440 Photoresists for wet etch, dry etch, implantation and lift-off 0.5 to 10 - i  


Thick Film Photoresist

Series Products Characteristic Thickness range [µm] Tone Sens-itivity*
AZ® 10XT Series AZ 10XT Thick positive novolak photoresists for plating and etch applications. Application: Solder, Cu, Au 5 to 50 (max. single coat 25) + G-H-i  
AZ® 125nXT Series AZ 125nXT Ultra-thick negative photoresists for advanced packaging applications. Application: Cu, Au, Solder 20 to 120 - g-h-I  
AZ® 40XT Series AZ 40XT-11D Chemically amplified positive tone thick photoresist for etch and plating applications. Application: Etch, Solder, Cu 20 to 100 (max. single coat 60) + g-h-I  
AZ® 4500 Series AZ 4533, AZ 4562 Thick film photoresists. Application: Solder, Cu, Au 2.7 to 10.0 + g-h  
AZ® 50XT Series AZ 50XT Thick positive novolak photoresists for plating and etch applications. Application: Solder, Cu, Etch 15 to 120 (max. single coat 65) + g-h  
AZ® 5nXT and 15nXT Series AZ 5nXT, AZ 15nXT Chemically amplified thick film resists for Cu RDL, TSV, and other plating & etch applications 5 to 20 - g-h-I  
AZ® 5XT Series AZ 5XT Thick film photoresists. Application: Si, Implant, Etch 3.0 to 5.0 + g-h-I
AZ® 9200 Series AZ 9245, AZ 9260 High-resolution thick film resists. Application: Solder, Cu, Au 3 to 50 (max. single coat 25) + G-H-i  
AZ® P4000 Series AZ P4620, AZ P4903, AZ P4330, AZ P4110, AZ P4210, AZ P4400 Positive tone thick film photoresists. Application: Solder, Cu, Au 2 to 55, (max. single coat 25) + g-h  
AZ® 12XT Series AZ12XT Chemically amplified photoresist for Cu RDL and TSV applications. Application: Cu, Au, TSV 5 to 20 + g-h-I  
NR21 Series NR21-20000P 18 to 200 - i
NR4 Series NR4-8000P 6.0 to 20 - i
NR5 Series NR5-8000 Thick film photoresist for DRIE, with temperature resistance up to 180 °C 5.8 to 100 - i  
PR1 Series PR1-4000A, PR1-12000A Thick film photoresist with superior resolution, RIE selectivity and short process time for metal plating, implantation an RIE 2.8 to 24.5 + i  
JSR THB Series THB 110N, THB 126N, THB 151N Thick photoresist for metal plating and bumping 5 to 100 - ?  
ma-P 1275 Series ma-P 1275, ma-P 1275 HV Thick film resists designed for plating applications 7.5 to 50 + g-i  
KMPR 1000 Series KMPR 1005, KMPR 1010, KMPR 1025, KMPR 1035, KMPR 1050 High contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and readily stripped from the wafer 4 to 120 - g-h-I  
MEGAPOSIT™ SPR™220 Series SPR220-1.2, SPR220-1.5, SPR220-3.0, SPR220-4.5, SPR220-7.0 General purpose photoresists with excellent adhesion and plating characteristics for MEMS and bump processes. Applications: Cu, Au, NiFe 1.0 to 30 + g-i  


Metal Lift-off Resists

Series Products Characteristic Thickness range [µm] Tone Sens-itivity*
AZ® 5214 E Photoresist AZ 5214 E Image reversal photoresist for lift-off applications with adjustable sidewall angle 1.1 to 2.0 Image reversal h-i  
AZ® nLOF® 2000 Series AZ nLOF 2020, AZ nLOF 2035, AZ nLOF 2070 I-line photoresists for metal lift-off applications. L/S to 0.7 um 1.5 to 10.0 - i  
AZ® nLOF® 5500 Photoresist AZ nLOF 5510 High resolution, i-line photoresist for metal lift-off applications. L/S to 0.22 um, CH to 0.35 um 0.75 to 1.5 - i  
NR7-PY Series NR7-1000PY, NR7-1500PY, NR7-3000PY, NR7-6000PY Lift-off photoresists with negative profile, temperature resistance up to 180 °C and adjustable undercut 0.7 to 25 - i  
NR9-PY Series NR9-1000PY, NR9-1500PY, NR9-3000PY, NR9-6000PY Lift-off photoresists with negative profile, enhanced adhesion and adjustable undercut 0.7 to 12.2 - i  
JSR NFR Series NFR 016 D2, NFR 111D2H, NFR 111D2H  
ma-N 400 and ma-N 1400 Series ma-N 405, ma-N 415, ma-N 420, ma-N 440, ma-N 490, ma-N 1405, ma-N 1407, ma-N 1410, ma-N 1420, ma-N 1440 Photoresists for wet etch, dry etch, implantation and lift-off 0.5 to 10 - i  


Other Propose Resists

Series Products Characteristic Thickness range [µm] Tone Sens-itivity*
NANO™ SU-8 2000 Series SU-8 2000.5, SU-8 2002, SU-8 2005, SU-8 2007, SU-8 2010, SU-8 2015, SU-8 2025, SU-8 2035, SU-8 2050, SU-8 2075,SU-8 2100, SU-8 2150 Improved formulation of SU-8, uses a faster drying, more polar solvent system resulting in improved coating quality and increases process throughput 0.5 to > 200 - g-h-i  
NANO™ SU-8 3000 Series SU-8 3005, SU-8 3050, SU-8 3010, SU-8 3025, SU-8 3035 Improved formulation of SU-8, has been designed for improved adhesion and reduced coating stress 4 to 120 - g-h-i  
NANO™ SU-8 Series SU-8 2, SU-8 5, SU-8 10, SU-8 25, SU-8 50, SU-8 100 High contrast, epoxy based photoresists designed for micromachining and other microelectronic applications, where a thick, chemically and thermally stable image is desired 1 to > 200 - g-h-i  
JSR WPR Series WPR-1020, WPR-1050, WPR-1201 3 to 20 -
NR71 Series NR71-250P, NR71-1000P, NR71-1500P, NR71-3000P, NR71-6000P Photoresists designed for DRIE and ion milling application with temperature resistance up to 180 °C 0.2 - 12.2 - i  
NR9 Series NR9-250P, NR9-1000P, NR9-1500P, NR9-3000P, NR9-6000P, NR9-8000P Photoresists with enhanced adhesion for wet etch applications 0.2 to 100 - i  


i-line = 365 nm, h-line = 405 nm, g-line = 436 nm  

 

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