Photoresist Database
Following list contains common near UV (360 nm – 380 nm) photoresists used in semiconductor and MEMS manufacturing.
The photoresists are sub-grouped by common properties
< Propose Other>
General Purpose Thin Film Photoresists
| Series |
Products |
Characteristic |
Thickness range [µm] |
Tone |
Sens-itivity* |
|
| AZ® 111 XFS Photoresist |
AZ 111 XFS |
General propose resists for wet etch applications with improved adhesion and reduced mask sticking |
0.8 to 1.4 |
+ |
h-i |
|
| AZ® 1500 Series |
AZ 1505, AZ 1512, AZ 1518, AZ 1529 |
General propose, resists for wet etch applications and plating |
0.4 to 4.0 |
+ |
g-h-i |
|
| AZ® 1500-SFD Series |
AZ 1512-SFD, AZ 1518-SFD |
Dyed versions of AZ® 1500, suppress reflectivity on metal surfaces |
1.2 to 3.0 |
+ |
g-h-i |
|
| AZ® 3300 Series |
AZ 3312, AZ 3318-D, AZ 3350-HS, AZ 3322HS 2D |
General purpose, crossover resists, thermally stable up to 125 °C |
1.0 to 2.5 |
+ |
g-h-i |
|
| AZ® 3300-F Series |
AZ 3312-F, AZ 3330-F |
High speed version of AZ® 3300 series |
0.8 - 5.0 |
+ |
g-h-i |
|
| AZ® 4999 Photoresist |
AZ 4999 |
Photoresist for spray coating applications |
NA |
+ |
g-h-i |
|
| AZ® 6600 Series |
AZ 6612, AZ 6615, AZ 6618-2DG, AZ 6624, AZ 6632 |
General propose resists for wet and dry etch application |
1.0 to 4.5 |
+ |
g-h-i |
|
| AZ® 8112 Photoresist |
AZ 8112 |
3 to 4 times faster version of 111 XFS, used for scanning projection exposure |
1.0 to 1.7 |
+ |
h-i |
|
| AZ® ECI 3000 Series |
AZ ECI 3007, AZ ECI 3012, AZ ECI 3027 |
Universal high resolution i-line/crossover photoresist series |
0.6 to 3.8 |
+ |
g-h-i |
|
| AZ® HiR™ 1075 Photoresist |
AZ HiR 1075 |
Ultra-high resolution, L/S to 0.22 um, CH to 0.35 um |
0.6 to 1.2 |
+ |
i |
|
| AZ® MiR™ 701 Series |
AZ MiR 701 |
High resolution, fast, cost effective photoresists designed for replacement of older mid-range production resists. L/S to 0.35 um, CH to 0.4 um |
0.6 to 3.0 |
+ |
g-i |
|
| AZ® MiR™ 703 Series |
AZ MiR 703, AZ MiR 703 (dyed) |
Mid range, fast, cost-effective photoresists designed for replacement of older mid-range and crossover production products. L/S to 0.4 um, CH to 0.5 um |
0.8 - 1.4 |
+ |
g-h-i |
|
| AZ® MiR™ 900 Photoresist |
AZ MiR 900 |
High aspect ratio. L/S to 0.6 um |
2.0 to 4.5 |
+ |
i |
|
| AZ® N4000 Series |
AZ N4035 |
Non corrosive broadband photoresist with process latitude over 50% and high sensitivity |
2.5 to 5.5 |
- |
g-h-i |
|
| AZ® N6000 Series |
AZ N6010, AZ N6020, AZ N6035, AZ N6070 |
High speed, i-line photoresists for ion implant applications. L/S to 0.6 um |
0.6 to 10.0 |
- |
i |
|
| HNR Series |
HNR 80, HNR 120 |
The resists with excellent adhesion resistance to “wet” etching solutions such as hydrofluoric or phosphoric/nitric acid mixtures and to plasma etching systems and .lower mask-to-wafer sticking tendencies during contact exposures |
0.6 to 1.5 |
- |
g-i |
|
| HPR 500 Series |
HPR 504, HPR 505, HPR 506 |
Photoresists with good adhesion (may not require priming) for ion implant, wet and dry etching. |
1.2 to 3.3 |
+ |
g-h |
|
| OiR 620 Series |
OiR 620-07, OiR 620-09, OiR 620-10 |
Resists designed for ultra-high resolution with a robust process window for 0.30 µm production design rules for non-reflective substrates |
0.6 to 1.3 |
+ |
i |
|
| OiR 674 Series |
OiR 674-09, OiR 674-11, OiR 674-14 |
High throughput advanced i-line resist for patterns down to 0.35 um with superior performance on contact hole and TiN layers and vertical profiles and wide process latitude |
0.7 to 1.6 |
+ |
i |
|
| OiR 906 Series |
OiR 906-12i, OiR 906-17i |
Fast i-line photoresist with high performance in g-line and wide process latitude for patterns down to 0.4 um. Compatible with BARC’s and TiN substrates and comes in dyed versions with fast photospeed |
0.6 to 2.4 |
+ |
g-i |
|
| OiR 907 Series |
OiR 907-12, OiR 907-17 |
Ultrafast i-line resists with high performance in g-line and broadband with wide process latitude and zero bias. For patterns down to 0.5 um |
1.0 to 2.5 |
+ |
g-i |
|
| OiR 908 Series |
OiR 908-12, OiR 908-17, OiR 908-35 |
Crossover photoresist designed for high throughput biased applications with has excellent thermals, and good wet etch adhesion. For patterns down to 0.7 um |
1.0 to 5.0 |
+ |
g-i |
|
| SC Series |
SC100, SC180, SC450 |
General purpose thin film negative photoresist with excellent edge acuity resistant to a variaty of etchants including those commonly used to etch silicon |
2.0 to 6.0 |
- |
g-i |
|
| PR1 Series |
PR1-1000A, PR1-2000A |
General purpose photoresist without HMDS requirement for etching, implantation and plating |
0.7 to 4.2 |
+ |
i |
|
| ma-P 1200 Series |
ma-P 1205, ma-P 1210, ma-P 1215, ma-P 1225, ma-P 1240 |
Thin film photoresists for wet etch, dry etch, implantation and plating |
0.5 to 10 |
+ |
g-i |
|
| MEGAPOSIT™ SPR™220 Series |
SPR220-1.2, SPR220-1.5, SPR220-3.0, SPR220-4.5, SPR220-7.0 |
General purpose photoresists with excellent adhesion and plating characteristics for MEMS and bump processes. Applications: Cu, Au, NiFe |
1.0 to 30 |
+ |
g-i |
|
| MEGAPOSIT™ SPR™3000 Photoresist |
SPR3012, SPR3012L, SPR3015M, SPR3017 |
General purpose photoresists for 0.6 um and larger with wide process latitude and high throughout |
0.8 - 1.7 |
+ |
g-h-i |
|
| MEGAPOSIT™ SPR™660 SERIES |
SPR660-0.8, SPR660-1.0, SPR660-1.2, SPR660-1.5, SPR660-2.1, SPR660-3.0, SPR660L-1.0, SPR660M-0.6, SPR660M-1.5 |
Advanced photoresists designed for 0.35 um and larger structures. Undyed and dyed versions available |
0.6 to 3.5 |
+ |
i |
|
| MEGAPOSIT™ SPR™700 SERIES |
SPR700-0.8, SPR700-1.0, SPR700-1.2, SPR700-1.5, SPR700-1.8, |
Multi wavelength photoresists optimized to provide robust process latitudes and high throughput with excellent thermal stability |
0.6 - 2.8 |
+ |
g-i |
|
| MEGAPOSIT™ SPR™955-CM SERIES |
SPR955-CM-0.7, SPR955-CM-0.9, SPR955-CM-1.1, SPR955-CM-1.4, SPR955-CM-1.8, SPR955-CM-2.1 |
General purpose, high throughput photoresist for 0.35 um front-end and back-end processes |
0.6 to 3.0 |
+ |
i |
|
| MICROPOSIT® S1800® Series |
S1805, S1811, S1813, S1813 J2, S1818, S1822 |
General propose photoresists for advanced IC fabrication |
0.5 to 3.3 |
+ |
G-i |
|
| ma-N 400 and ma-N 1400 Series |
ma-N 405, ma-N 415, ma-N 420, ma-N 440, ma-N 490, ma-N 1405, ma-N 1407, ma-N 1410, ma-N 1420, ma-N 1440 |
Photoresists for wet etch, dry etch, implantation and lift-off |
0.5 to 10 |
- |
i |
|
| Series |
Products |
Characteristic |
Thickness range [µm] |
Tone |
Sens-itivity* |
|
| AZ® 10XT Series |
AZ 10XT |
Thick positive novolak photoresists for plating and etch applications. Application: Solder, Cu, Au |
5 to 50 (max. single coat 25) |
+ |
G-H-i |
|
| AZ® 125nXT Series |
AZ 125nXT |
Ultra-thick negative photoresists for advanced packaging applications. Application: Cu, Au, Solder |
20 to 120 |
- |
g-h-I |
|
| AZ® 40XT Series |
AZ 40XT-11D |
Chemically amplified positive tone thick photoresist for etch and plating applications. Application: Etch, Solder, Cu |
20 to 100 (max. single coat 60) |
+ |
g-h-I |
|
| AZ® 4500 Series |
AZ 4533, AZ 4562 |
Thick film photoresists. Application: Solder, Cu, Au |
2.7 to 10.0 |
+ |
g-h |
|
| AZ® 50XT Series |
AZ 50XT |
Thick positive novolak photoresists for plating and etch applications. Application: Solder, Cu, Etch |
15 to 120 (max. single coat 65) |
+ |
g-h |
|
| AZ® 5nXT and 15nXT Series |
AZ 5nXT, AZ 15nXT |
Chemically amplified thick film resists for Cu RDL, TSV, and other plating & etch applications |
5 to 20 |
- |
g-h-I |
|
| AZ® 5XT Series |
AZ 5XT |
Thick film photoresists. Application: Si, Implant, Etch |
3.0 to 5.0 |
+ |
g-h-I |
|
| AZ® 9200 Series |
AZ 9245, AZ 9260 |
High-resolution thick film resists. Application: Solder, Cu, Au |
3 to 50 (max. single coat 25) |
+ |
G-H-i |
|
| AZ® P4000 Series |
AZ P4620, AZ P4903, AZ P4330, AZ P4110, AZ P4210, AZ P4400 |
Positive tone thick film photoresists. Application: Solder, Cu, Au |
2 to 55, (max. single coat 25) |
+ |
g-h |
|
| AZ® 12XT Series |
AZ12XT |
Chemically amplified photoresist for Cu RDL and TSV applications. Application: Cu, Au, TSV |
5 to 20 |
+ |
g-h-I |
|
| NR21 Series |
NR21-20000P |
|
18 to 200 |
- |
i |
|
| NR4 Series |
NR4-8000P |
|
6.0 to 20 |
- |
i |
|
| NR5 Series |
NR5-8000 |
Thick film photoresist for DRIE, with temperature resistance up to 180 °C |
5.8 to 100 |
- |
i |
|
| PR1 Series |
PR1-4000A, PR1-12000A |
Thick film photoresist with superior resolution, RIE selectivity and short process time for metal plating, implantation an RIE |
2.8 to 24.5 |
+ |
i |
|
| JSR THB Series |
THB 110N, THB 126N, THB 151N |
Thick photoresist for metal plating and bumping |
5 to 100 |
- |
? |
|
| ma-P 1275 Series |
ma-P 1275, ma-P 1275 HV |
Thick film resists designed for plating applications |
7.5 to 50 |
+ |
g-i |
|
| KMPR 1000 Series |
KMPR 1005, KMPR 1010, KMPR 1025, KMPR 1035, KMPR 1050 |
High contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH) and readily stripped from the wafer |
4 to 120 |
- |
g-h-I |
|
| MEGAPOSIT™ SPR™220 Series |
SPR220-1.2, SPR220-1.5, SPR220-3.0, SPR220-4.5, SPR220-7.0 |
General purpose photoresists with excellent adhesion and plating characteristics for MEMS and bump processes. Applications: Cu, Au, NiFe |
1.0 to 30 |
+ |
g-i |
|
| Series |
Products |
Characteristic |
Thickness range [µm] |
Tone |
Sens-itivity* |
|
| AZ® 5214 E Photoresist |
AZ 5214 E |
Image reversal photoresist for lift-off applications with adjustable sidewall angle |
1.1 to 2.0 |
Image reversal |
h-i |
|
| AZ® nLOF® 2000 Series |
AZ nLOF 2020, AZ nLOF 2035, AZ nLOF 2070 |
I-line photoresists for metal lift-off applications. L/S to 0.7 um |
1.5 to 10.0 |
- |
i |
|
| AZ® nLOF® 5500 Photoresist |
AZ nLOF 5510 |
High resolution, i-line photoresist for metal lift-off applications. L/S to 0.22 um, CH to 0.35 um |
0.75 to 1.5 |
- |
i |
|
| NR7-PY Series |
NR7-1000PY, NR7-1500PY, NR7-3000PY, NR7-6000PY |
Lift-off photoresists with negative profile, temperature resistance up to 180 °C and adjustable undercut |
0.7 to 25 |
- |
i |
|
| NR9-PY Series |
NR9-1000PY, NR9-1500PY, NR9-3000PY, NR9-6000PY |
Lift-off photoresists with negative profile, enhanced adhesion and adjustable undercut |
0.7 to 12.2 |
- |
i |
|
| JSR NFR Series |
NFR 016 D2, NFR 111D2H, NFR 111D2H |
|
|
|
|
|
| ma-N 400 and ma-N 1400 Series |
ma-N 405, ma-N 415, ma-N 420, ma-N 440, ma-N 490, ma-N 1405, ma-N 1407, ma-N 1410, ma-N 1420, ma-N 1440 |
Photoresists for wet etch, dry etch, implantation and lift-off |
0.5 to 10 |
- |
i |
|
| Series |
Products |
Characteristic |
Thickness range [µm] |
Tone |
Sens-itivity* |
|
| NANO™ SU-8 2000 Series |
SU-8 2000.5, SU-8 2002, SU-8 2005, SU-8 2007, SU-8 2010, SU-8 2015, SU-8 2025, SU-8 2035, SU-8 2050, SU-8 2075,SU-8 2100, SU-8 2150 |
Improved formulation of SU-8, uses a faster drying, more polar solvent system resulting in improved coating quality and increases process throughput |
0.5 to > 200 |
- |
g-h-i |
|
| NANO™ SU-8 3000 Series |
SU-8 3005, SU-8 3050, SU-8 3010, SU-8 3025, SU-8 3035 |
Improved formulation of SU-8, has been designed for improved adhesion and reduced coating stress |
4 to 120 |
- |
g-h-i |
|
| NANO™ SU-8 Series |
SU-8 2, SU-8 5, SU-8 10, SU-8 25, SU-8 50, SU-8 100 |
High contrast, epoxy based photoresists designed for micromachining and other microelectronic applications, where a thick, chemically and thermally stable image is desired |
1 to > 200 |
- |
g-h-i |
|
| JSR WPR Series |
WPR-1020, WPR-1050, WPR-1201 |
|
3 to 20 |
- |
|
|
| NR71 Series |
NR71-250P, NR71-1000P, NR71-1500P, NR71-3000P, NR71-6000P |
Photoresists designed for DRIE and ion milling application with temperature resistance up to 180 °C |
0.2 - 12.2 |
- |
i |
|
| NR9 Series |
NR9-250P, NR9-1000P, NR9-1500P, NR9-3000P, NR9-6000P, NR9-8000P |
Photoresists with enhanced adhesion for wet etch applications |
0.2 to 100 |
- |
i |
|
i-line = 365 nm, h-line = 405 nm, g-line = 436 nm
If you are setting up a spin coating process, Please refer Spin speed .
|